Vapor deposition mask, frame-equipped vapor deposition mask, vapor deposition mask preparation body, and method for producing organic semiconductor element

ABSTRACT

A vapor deposition mask capable of correctly performing confirmation of whether a shape pattern of openings formed in a resin mask is normal or similar confirmation while satisfying both high definition and lightweight, a vapor deposition mask preparation body for obtaining the vapor deposition mask, a frame-equipped vapor deposition mask including the vapor deposition mask, and a method for producing an organic semiconductor element using the frame-equipped vapor deposition mask. The aforementioned problem is solved by using, in a vapor deposition mask including a metal mask in which a through hole is formed and a resin mask in which an opening corresponding to a pattern to be produced by vapor deposition is formed at a position overlapping with the through hole, the metal mask and the resin mask being stacked, wherein the resin mask has about 40% or less of light ray transmittance at a wavelength of about 550 nm.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/740,535, filed Jan. 13, 2020, which in turn is a division of U.S.application Ser. No. 15/313,359, filed Nov. 22, 2016, now U.S. Pat. No.10,573,815, issued Feb. 25, 2020, which in turn is the National Stageentry of International Application No. PCT/JP2015/065605 filed May 29,2015, which designated the United States, the entirety of which isincorporated herein by reference.

FIELD OF THE INVENTION

Embodiments of the present invention relate to a method for producing avapor deposition mask, a frame-equipped vapor deposition mask, a vapordeposition mask preparation body, and an organic semiconductor element.

BACKGROUND OF THE INVENTION

With upsizing of the products using organic EL elements or increase insubstrate sizes, a demand for upsizing is also growing with respect tovapor deposition masks, and the metal plates for use in production ofthe vapor deposition masks constituted of metals are also upsized.However, with the present metal processing technique, it is difficult toform openings in a large metal plate with high precision, which cannotrespond to enhancement in definition of the openings.

Moreover, in the case of a vapor deposition mask constituted of only ametal, the mass thereof also increases with upsizing, and the total massincluding a frame also increases, which becomes a hindrance to handling.

Under such circumstances, in Patent Document 1, there is proposed avapor deposition mask including a metal mask in which slits are providedand a resin mask which is positioned on the surface of the metal maskand in which openings corresponding to a pattern to be produced by vapordeposition are arranged for a plurality of rows in the lengthwisedirection and in the crosswise direction, the metal mask and the resinmask being stacked. The vapor deposition mask proposed in PatentDocument 1 is regarded as being capable of satisfying both highdefinition and lightweight in upsizing, and moreover, forming a vapordeposition pattern with high definition.

CITATION LIST Patent Document

Patent Document 1: Japanese Patent No. 5288072

SUMMARY OF THE INVENTION Technical Problem

A primary object of an embodiment of the present invention is to providea vapor deposition mask capable of correctly performing inspection ofwhether or not a shape pattern of openings formed in a resin mask isnormal while satisfying both high definition and lightweight, to providea vapor deposition mask preparation body for obtaining the vapordeposition mask, to provide a frame-equipped vapor deposition maskincluding the vapor deposition mask, and further, to provide a methodfor producing an organic semiconductor element using the frame-equippedvapor deposition mask.

Solution to Problem

In order to solve the aforementioned problem, there is provided a vapordeposition mask according to an embodiment of the present invention,including: a metal mask in which a slit is formed; and a resin mask inwhich an opening corresponding to a pattern to be produced by vapordeposition is formed at a position overlapping with the slit, the metalmask and the resin mask being stacked, wherein the resin mask has about40% or less of light ray transmittance at a wavelength of about 550 nm.

In the aforementioned embodiment of the invention, the resin maskpreferably contains a color material component. Moreover, a thickness ofthe resin mask is preferably about 3 μm or more and less than about 10μm.

Moreover, in order to solve the aforementioned problem, there isprovided a frame-equipped vapor deposition mask according to anembodiment of the present invention, constituted by fixing a vapordeposition mask onto a frame, wherein the vapor deposition mask includesa metal mask in which a slit is formed and a resin mask in which anopening corresponding to a pattern to be produced by vapor deposition isformed at a position overlapping with the slit, the metal mask and theresin mask being stacked, and the resin mask has about 40% or less oflight ray transmittance at a wavelength of about 550 nm.

Moreover, in order to solve the aforementioned problem, there isprovided a vapor deposition mask preparation body for obtaining a vapordeposition mask according to an embodiment of the present invention, thevapor deposition mask including a metal mask in which a slit is formedand a resin mask in which an opening corresponding to a pattern to beproduced by vapor deposition is formed at a position overlapping withthe slit, the metal mask and the resin mask being stacked, wherein themetal mask in which the slit is provided is stacked on one surface of aresin plate, and the resin plate has about 40% or less of light raytransmittance at a wavelength of about 550 nm.

Moreover, in order to solve the aforementioned problem, there isprovided a method for producing an organic semiconductor elementaccording to an embodiment of the present invention, including a step offorming a vapor deposition pattern on a vapor deposition target using aframe-equipped vapor deposition mask in which a vapor deposition mask isfixed to a frame, wherein in the step of forming the vapor depositionpattern, the vapor deposition mask fixed to the frame includes a metalmask in which a slit is formed and a resin mask in which an openingcorresponding to a pattern to be produced by vapor deposition is formedat a position overlapping with the slit, the metal mask and the resinmask being stacked, and further, the resin mask has about 40% or less oflight ray transmittance at a wavelength of about 550 nm.

Advantageous Effects

According to the vapor deposition mask and the frame-equipped vapordeposition mask of an embodiment of the present invention, whilesatisfying both high definition and lightweight, inspection of whetheror not a shape pattern of openings formed in a resin mask is normal canbe correctly performed. Moreover, according to a vapor deposition maskpreparation body of an embodiment of the present invention, the vapordeposition mask described above can be simply produced. Moreover,according to the method for producing an organic semiconductor elementof an embodiment of the present invention, organic semiconductorelements can be produced with high precision.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1(a) is an elevation view of the vapor deposition mask of anembodiment as seen from a metal mask side and FIG. 1(b) is across-sectional view taken along the line A-A in FIG. 1(a).

FIG. 2 is an elevation view of the vapor deposition mask of Embodiment(A) as seen from the metal mask side.

FIG. 3 is an elevation view of the vapor deposition mask of Embodiment(A) as seen from the metal mask side.

FIG. 4 is an elevation view of the vapor deposition mask of Embodiment(A) seen from the metal mask side.

FIGS. 5(a) to 5(b) present elevation views of the vapor deposition maskof Embodiment (A) as seen from the metal mask side.

FIG. 6 is an elevation view of the vapor deposition mask of Embodiment(B) as seen from the metal mask side.

FIG. 7 is an elevation view of the vapor deposition mask of Embodiment(B) as seen from the metal mask side.

FIGS. 8(a) to 8(d) are schematic cross-sectional views, of the vapordeposition mask, schematically showing a state of transmitted lightbeing transmitted through the resin mask. FIGS. 8(a) to 8(c) are for avapor deposition mask of an embodiment. FIG. 8(d) is for a comparativevapor deposition mask.

FIG. 9 is an elevation view exemplarily showing a frame-equipped vapordeposition mask.

FIG. 10 is an elevation view exemplarily showing a frame-equipped vapordeposition mask.

FIGS. 11(a) to 11(c) are elevation views exemplarily showing a frame.

FIGS. 12(a) to 12(e) are shade diagrams of Samples 1, 2 and 4 to 6 ofthe resin mask, respectively.

DETAILED DESCRIPTION OF THE INVENTION <<Vapor Deposition Mask>>

Hereafter, a vapor deposition mask 100 of an embodiment of the presentinvention is specifically described. As shown in FIG. 1, the vapordeposition mask 100 of an embodiment includes a metal mask 10 in which aslit 15 is formed and a resin mask 20 in which an opening 25corresponding to a pattern to be produced by vapor deposition is formedat a position overlapping with the slit 15, the metal mask and the resinmask being stacked. FIG. 1(a) is an elevation view of a vapor depositionmask of an embodiment as seen from the metal mask 10 side and FIG. 1(b)is a schematic cross-sectional view taken along the line A-A in FIG.1(a).

(Resin Mask)

As shown in FIG. 1, a plurality of openings 25 are provided in the resinmask 20. Further, the vapor deposition mask 100 of an embodiment of thepresent invention is characterized in that the resin mask 20 has about40% or less of light ray transmittance at a wavelength of about 550 nm.

When the vapor deposition pattern is produced on a vapor-depositedsurface of a vapor deposition target using the vapor deposition mask 100of an embodiment, this is performed in the state where thevapor-deposited surface of the vapor deposition target is opposed to thesurface on the resin mask 20 side of the vapor deposition mask 100, andthe vapor-deposited surface of the vapor deposition target is in closecontact with the resin mask 20 of the vapor deposition mask. Then, avapor deposition material released from a vapor deposition source iscaused to pass through the openings 25 formed in the resin mask 20 andto stick to the vapor-deposited surface of the vapor deposition target,and thereby, the vapor deposition pattern corresponding to the openings25 formed in the resin mask 20 is produced on the vapor-depositedsurface of the vapor deposition target. Notably, a vapor depositionmethod using the vapor deposition mask of an embodiment is not limitedat all but, for example, physical vapor deposition (Physical VaporDeposition) such as a sputtering method, a vacuum vapor depositionmethod, ion plating and an electron beam vapor deposition method,chemical vapor deposition (Chemical Vapor Deposition) such as thermalCVD, plasma CVD and photo-induced CVD methods, and the like can becited.

In other words, in the aforementioned method for producing the vapordeposition pattern on the vapor-deposited surface of the vapordeposition target, the vapor deposition pattern formed on thevapor-deposited surface of the vapor deposition target is to bedetermined by the opening pattern of the openings 25 formed in the resinmask 20. As a result, it is important that in the resin mask 20 of thevapor deposition mask 100, the opening pattern of the openings 25 isformed to meet the vapor deposition pattern the formation of which isdesired on the vapor-deposited surface of the vapor deposition target,and it is required that before use of the vapor deposition mask, thatis, after production of the vapor deposition mask, whether or not theopening pattern of the openings 25 formed in the resin mask 20 of thevapor deposition mask 100 is formed to meet the vapor deposition patternthe formation of which is desired on the vapor-deposited surface of thevapor deposition target is inspected.

As one of inspection methods for determining whether or not the openingpattern of the openings 25 formed in the resin mask 20 of the vapordeposition mask 100 meets the vapor deposition pattern the formation ofwhich is desired on the vapor-deposited surface of the vapor depositiontarget, there is a method of irradiating the resin mask 20 with visiblelight to inspect the opening pattern formed in the resin mask 20 withshade formed by a region which transmits the visible light and a regionwhich does not transmit or hardly transmits it in the resin mask 20.Specifically, it is a method in which the resin mask 20 is irradiatedfrom the side of the surface, of the resin mask 20, that is not incontact with the metal mask 10 with visible light, and the transmittedlight is imaged from the side of the surface, of the metal mask 10, thatis not in contact with the resin mask 20 by a camera, or the resin mask20 is irradiated from the side of the surface, of the metal mask 10,that is not in contact with the resin mask 20 with visible light, andthe transmitted light is imaged from the side of the surface, of theresin mask 20, that is not in contact with the metal mask 10 by a camerato inspect the opening pattern formed in the resin mask 20 with shadeoriginated from the imaged transmitted light.

When inspecting the opening pattern as mentioned above, in the casewhere the mask in which the openings are formed is a mask constituted ofa metal material that does not transmit visible light, the contrast intone of shade of the opening pattern of the openings formed in the maskis high, and the opening pattern can be inspected without any problem.On the other hand, in the case where the mask in which the openings areformed is a mask constituted of a resin material that transmits visiblelight, the contrast in tone of shade of the opening pattern of theopenings formed in the mask is low, and there is to arise a problem thatthe opening pattern cannot be sufficiently inspected. In other words,the vapor deposition mask which has a configuration in which the metalmask 10 in which the slit 15 is formed is stacked on the resin mask 20in which the openings 25 corresponding to a pattern to be produced byvapor deposition are formed at a position overlapping with the slit 15and can satisfy both high definition and lightweight is to include aproblem that the opening pattern of the openings formed in the resinmask cannot be correctly inspected. However, in the aforementioned vapordeposition mask capable of satisfying both high definition andlightweight, the transmittance of visible light in the occasion when theresin mask 20 is irradiated with the visible light, specifically, thetransmittance of visible light in a region in which the openings 25 ofthe resin mask 20 are not formed (hereinafter sometimes referred to asregion not formed with openings) has not been currently considered atall. In order to enhance the contrast in tone of shade originated fromthe imaged transmitted light, it is desirable that only the openings 25of the resin mask 20 transmit visible light, and the region not formedwith openings in the resin mask 20 does not transmit the visible lightor has low transmittance thereof. However, with a conventional resinmask in which the transmittance of visible light is not considered atall, the visible light is transmitted also in the region not formed withopenings in the resin mask, the contrast in tone of shade imaged by acamera is low, and it is difficult to correctly grasp the edge part ofthe shade, in other words, the edge part in the opening pattern of theopenings 25 formed in the resin mask 20. When the edge part cannot becorrectly grasped, it is difficult to inspect whether or not the openingpattern of the openings 25 formed in the resin mask 20 of the vapordeposition mask 100 meets the vapor deposition pattern the formation ofwhich is desired on the vapor-deposited surface of the vapor depositiontarget.

The vapor deposition mask 100 of an embodiment of the present inventionis characterized in that the resin mask 20 has about 40% or less oflight ray transmittance at a wavelength of about 550 nm. According tothe vapor deposition mask 100, when the resin mask 20 is irradiated withvisible light, the visible light can be suppressed from beingtransmitted through the region not formed with openings in the resinmask 20, the contrast in tone of shade imaged by a camera can beenhanced, and the edge part of the shade, in other words, the edge partin the opening pattern of the openings 25 formed in the resin mask 20can be correctly grasped. In this way, it can be determined whether ornot the opening pattern of the openings 25 formed in the resin mask 20of the vapor deposition mask 100 meets the vapor deposition pattern theformation of which is desired on the vapor-deposited surface of thevapor deposition target. In particular, according to the vapordeposition mask of an embodiment of the present invention, since theopenings 25 are formed in the mask constituted of a resin material, theopenings 25 in the relevant mask can be in high definition. In general,along with progress of high definition of the openings 25, the contrastin tone of shade imaged tends to be lower. As mentioned above, in anembodiment of the present invention, since the resin mask 20 is definedto have about 40% or less of light ray transmittance at a wavelength ofabout 550 nm, the contrast in tone of shade can be sufficientlyenhanced. Accordingly, even in the case of the high definition openings25, for example, even in the case of setting the resin mask in which thehigh definition openings 25 exceeding 400 ppi are formed, the openingpattern of the openings 25 can be correctly inspected.

The light ray transmittance of the resin mask 20 stated in thespecification of the present application means the transmittance oflight transmitted through the region not formed with openings which is aregion in which the openings 25 are not formed in the resin mask 20.

The light ray transmittance of visible light can be measured using aspectrometer (MPC-3100, Shimadzu Corporation) or the like.

The reason that in the vapor deposition mask 100 of an embodiment of thepresent invention, the resin mask 20 is defined to have about 40% orless of light ray transmittance at a wavelength of about 550 nm is thata wavelength of about 550 nm is a substantial center wavelength ofvisible light, and by setting the light ray transmittance at awavelength of about 550 nm to be about 40% or less, the contrast in toneof shade imaged by irradiation with the visible light can besufficiently enhanced. More specifically, since a spectrum of atransmission light source which is incident light, for example, aspectrum of a white light source includes a wavelength of about 550 nmwhich is a substantial center wavelength of visible light, by settingthe light ray transmittance at a wavelength of about 550 nm to be about40% or less, the contrast in tone of shade imaged can be sufficientlyenhanced. Notably, when the light ray transmittance at a wavelength ofabout 550 nm exceeds about 40%, the contrast in tone of shade in theoccasion of irradiation with visible light cannot be sufficientlyenhanced, and the edge part of the shade cannot be correctly grasped.While the light ray transmittance at a wavelength of about 550 nm onlyhas to satisfy the condition that it is about 40% or less as mentionedabove, it is preferably about 30% or less, still preferably about 10% orless. The lower limit value thereof is not specially limited but 0%. Inparticular, when the light ray transmittance at a wavelength of about550 nm is set to be about 10% or less, since the contrast in tone ofshade can be more sufficiently enhanced, inspection precision can befurther improved.

Furthermore, it is preferable to set the resin mask to have about 40% orless of light ray transmittance at a wavelength of about 550 nm andabout 55% or less of maximum value of the light ray transmittance atabout 450 nm to 650 nm of wavelength, in particular, the resin mask tohave about 40% or less of light ray transmittance at a wavelength ofabout 550 nm and about 55% or less of maximum value of the light raytransmittance at about 380 nm to 780 nm of wavelength. Moreover, it isstill preferable to set the resin mask to have about 40% or less ofmaximum value of the light ray transmittance at about 450 nm to 650 nmof wavelength, in particular, at about 380 nm to 780 nm of wavelength.Moreover, it is further preferable to set the resin mask to have about40% or less of light ray transmittance at a wavelength of about 550 nmand about 55% or less of maximum value of the light ray transmittance inthe visible light wavelength region, and it is particularly preferableto set the resin mask to have about 40% or less of maximum value of thelight ray transmittance in the visible light wavelength region. Theresin mask most preferably has about 10% or less of maximum value of thelight ray transmittance at about 450 nm to 650 nm, and in particular,about 10% or less of maximum value of the light ray transmittance atabout 380 nm to 780 nm of wavelength, or the resin mask to have about10% or less of maximum value of the light ray transmittance in thevisible light wavelength region. The visible light wavelength regionstated here means the wavelength range defined by JIS-Z8120(2001), andits short wavelength limit is about 360 to 400 nm and its longwavelength limit is about 760 to 830 nm. By setting, not only the lightray transmittance at a wavelength of about 550 nm, but also the lightray transmittance at about 380 nm to 780 nm of wavelength or in thevisible light wavelength region to be within the aforementionedpreferable range, deviation of the contrast in tone of shade can besuppressed across wide wavelengths and the contrast in tone of shade canbe further enhanced.

The material of the resin mask 20 is not limited but, for example, amaterial that enables formation of the opening 25 with high definitionby laser processing or the like, has a low rate of dimensional changeand a low rate of humidity absorption under heat and with passage oftime, and is light weight, is preferably used. As such materials, apolyimide resin, a polyamide resin, a polyamide-imide resin, a polyesterresin, a polyethylene resin, a polyvinylalcohol resin, a polypropyleneresin, a polycarbonate resin, a polystyrene resin, a polyacrylonitrileresin, an ethylene-vinyl acetate copolymer resin, anethylene-vinylalcohol copolymer resin, an ethylene-methacrylic acidcopolymer resin, a polyvinyl chloride resin, a polyvinylidene chlorideresin, cellophane, an ionomer resin and the like can be cited. Among thematerials shown above by way of example, the resin materials with thethermal expansion coefficients of about 16 ppm/° C. or less arepreferable, the resin materials with the rates of humidity absorption ofabout 1.0% or less are preferable, and the resin materials includingboth conditions are particularly preferable. The resin mask using theseresin materials enables dimensional precision of the openings 25 to beimproved and a rate of dimensional change and a rate of humidityabsorption under heat and with passage of time to be small. From amongthe materials of the resin mask exemplarily presented above, theparticularly preferable material is polyimide resin.

In the resin mask 20 constituted of the material exemplarily presentedabove and the like, a device to set the resin mask 20 to have about 40%or less of light ray transmittance at a wavelength of about 550 nm isnot specially limited but, for example, the resin mask 20 can berealized by setting it to have configurations of a first device to athird device below. Notably, the resin mask 20 is not limited to theconfigurations described below but the resin mask 20 only eventually hasto have about 40% or less of light ray transmittance at a wavelength ofabout 550 nm. As shown in FIGS. 8(a) to 8(c), according to each devicedescribed below, visible light can be caused not to be transmittedthrough the region not formed with openings in the resin mask 20 or tobe suppressed from being transmitted therethrough, and the contrast intone of shade can be sufficiently enhanced. On the other hand, as shownin FIG. 8(d), with a conventional vapor deposition mask 100X, visiblelight tends to be transmitted through the region not formed withopenings in the resin mask 20X, and the contrast in tone of shade cannotbe sufficiently enhanced.

(First Device)

As shown in FIG. 8(a), the first device is a device to cause the resinmask 20 constituted of the material exemplarily presented above and thelike to contain a color material component and to set the light raytransmittance at a wavelength of about 550 nm to be about 40% or less.In other words, the resin mask 20 in the first device contains the colormaterial component along with the material exemplarily presented aboveand the like. The color material component is not specially limited butthe material and the content with which the resin mask 20 can have about40% or less of light ray transmittance at a wavelength of about 550 nmonly have to be properly selected. The color material component may bean organic material or may be an inorganic material, and conventionallyknown dyes and pigments, fine particles of these, and the like can beproperly selected and used. Moreover, ones other than these can also beused as long as the resin mask 20 can be set to have about 40% or lessof light ray transmittance at a wavelength of about 550 nm. One kind ofcolor material component may be solely used or two or more kinds thereofmay also be simultaneously used. Moreover, the color material componentcontained in the resin mask 20 only has to be selected with a processtemperature and the like in the occasion when the resin mask 20 or aresin plate mentioned later is formed taken into consideration. Forexample, when polyimide resin is used as the material of the resin mask,it is preferable to use a color material component with high heatresistance. The shape of the color material component is not speciallylimited but particles in a conventionally known shape such, for example,as a spherical shape, a needle shape and a scale shape may be used, andmoreover, the dimension thereof is also not specially limited. Notably,when the dimension of the color material component exceeds about 1 μm,in the case of setting the resin mask 20 containing the color materialcomponent, defects such as projections tend to arise. With this pointtaken into consideration, the dimension of the color material componentis preferably about 1 μm or less. The lower limit value of the dimensionis not specially limited but about 1 nm.

As examples of the color material component, for example, carbon black,titanium oxide, titanium dioxide, black iron oxide, yellow iron oxide,red iron oxide, manganese oxide, manganese dioxide, chromium oxide,chromium dioxide, silicon oxide, silicon dioxide, ultramarine, anilineblack, activated carbon and the like can be cited. Notably, as thecontent of the color material component becomes more, the strength ofthe resin mask tends to decrease more, and in a vapor deposition step ofproducing a vapor deposition pattern on a vapor-deposited surface of avapor deposition target using the vapor deposition mask and in acleaning step of cleaning the vapor deposition mask, durability of usetends to decrease more. Accordingly, for the color material component,it is preferable to reduce the content of the color material componentby using a shape and a material with which light shielding ability isenhanced. The color material component is preferably black and small inwavelength dependency. From among the color material componentsexemplarily presented above, carbon black, black iron oxide, titaniumoxide and titanium dioxide are the particularly preferable colormaterial components. The content of the color material component ispreferably about 20 mass % or less to the total mass of the resinmaterial of the resin mask, still preferably about 10 mass % or less,particularly preferably about 6 mass % or less. The reason is that whenthe content of the color material component to the total mass of theresin material of the resin mask 20 exceeds about 20 mass %, dispersityof the color material component in the resin mask 20 becomes uneven, thenumber of defects in the resin mask 20 containing the color materialcomponent increases, and the strength of the resin mask deteriorates.

Moreover, the resin mask 20 in the first device may contain anycomponents as well as the aforementioned material of the resin mask andthe color material component. For example, a component, such as adispersant, needed for forming the resin mask in the first device can bearbitrarily blended. The same holds true for a color material layer 40in the resin mask 20 in the second device mentioned later.

The thickness of the resin mask 20 in the first device is not speciallylimited but, in the case of further improving the effect of suppressinggeneration of a shadow, the thickness of the resin mask 20 is preferablyless than about 10 μm. A preferable range of the lower limit value isnot specially limited but, in the case where the thickness of the resinmask 20 is less than about 3 μm, defects such as a pinhole tend to ariseand a risk of deformation or the like increases. In particular, bysetting the thickness of the resin mask 20 to be about 3 μm or more andless than about 10 μm, still preferably about 4 μm or more and about 8μm or less, the influence of a shadow in formation of a high definitionpattern exceeding 400 ppi can be more effectively prevented. Moreover,while the resin mask 20 may be directly bonded to the metal mask 10mentioned later or may be bonded thereto via an adhesive layer, in thecase where the resin mask 20 is bonded to the metal mask 10 via theadhesive layer, the total thickness of the resin mask 20 and theadhesive layer is preferably within the aforementioned preferablethickness range. Notably, the shadow is a phenomenon that a part of avapor deposition material released from a vapor deposition sourcecollides with inner wall surfaces of the slit of the metal mask and/orthe opening of the resin mask and does not reach the vapor depositiontarget, and thereby, a portion without vapor deposition that has a filmthickness smaller than the intended vapor deposition film thicknessarises.

(Second Device)

As shown in FIG. 8(b), the second device is a device to form the colormaterial layer 40 on the region not formed with openings, in the resinmask 20, that is not in contact with the metal mask 10, and thereby, toset the resin mask 20 to have about 40% or less of light raytransmittance at a wavelength of about 550 nm. Notably, the colormaterial layer 40 stated here is supposed to be included in the resinmask 20. In other words, a stacked body of the resin mask 20 and thecolor material layer 40 only has to have about 40% or less of light raytransmittance at a wavelength of about 550 nm.

For the material of the color material layer, the aforementioned colormaterial components described for the first device only have to beproperly selected to form a layer containing the color materialcomponent. The thickness of the color material layer 40 is not speciallylimited but the total thickness of the resin mask 20 and the colormaterial layer 40 is preferably the aforementioned thickness of theresin mask 20 described for the first device.

(Third Device)

As shown in FIG. 8(c), the third device is a device to increase thethickness of the resin mask, and thereby, to set the light raytransmittance at a wavelength of about 550 nm to be about 40% or less.

With the third device, the thickness of the resin mask 20 that can haveabout 40% or less of light ray transmittance at a wavelength of about550 nm can be properly configured depending on the material and the likeof the resin mask, and is typically about 30 μm or more.

As described above, for the purpose of suppressing generation of ashadow, the thickness of the resin mask is preferably less than about 10μm. Accordingly, in an embodiment of the present invention, it ispreferable to set the resin mask 20 to have about 40% or less of lightray transmittance at a wavelength of about 550 nm using theaforementioned first device or the aforementioned second device.Notably, the resin mask 20 in the second device includes a problem thatthe color material layer 40 is peeled off from the resin mask 20, and/ora problem that peeled-off pieces arise in a cleaning step of cleaningthe vapor deposition mask 100 or in a stage of forming the openings 25in order to obtain the resin mask 20 in the second device. The resinmask in the first device obtained by causing the resin mask 20 tocontain the color material component does not include these problems,and as compared with the resin mask 20 in the second device, it can besaid to be a preferable device. Moreover, in view of the resin mask inthe third device including a problem of long time in forming theopenings 25 due to the large thickness of the resin mask 20, a problemthat a shadow tends to be generated due to the large energy in theoccasion when the openings 25 are formed by laser processing or thelike, and the similar problem, the resin masks in the first device andthe second device are preferable.

Moreover, while when the openings 25 are formed in the resin mask usinglaser processing or the like, the material of the resin mask issometimes present as foreign matters in the openings 25 or near theopenings 25, in the resin mask 20 in the first device, the resin mask 20itself has a function of suppressing visible light from beingtransmitted, in other words, the foreign matters themselves caused bythe material of the resin mask have a function of suppressing visiblelight from being transmitted.

Accordingly, according to the resin mask 20 in the first device, notonly the edge part of the opening 25 but also the foreign matter causedby the material of the resin mask can be correctly grasped with itsshade. Furthermore, according to the resin mask 20 in the first devicewhich is caused to contain the color material component, adjustment ofthe transmittance is easy, and the resin mask 20 can be simply set tohave about 40% or less of light ray transmittance at a wavelength ofabout 550 nm.

Moreover, in the resin mask 20 of the vapor deposition mask 100 of anembodiment, the first device to the third device described above can becombined. Moreover, also by combining various devices other than these,the resin mask 20 can be set to have about 40% or less of light raytransmittance at a wavelength of about 550 nm.

As shown in FIGS. 8(a) to 8(c), according to the resin mask 20 havingabout 40% or less of light ray transmittance at a wavelength of about550 nm, visible light cannot be transmitted or transmitted lighttransmitted through the region not formed with openings in the resinmask can be suppressed. FIG. 8(d) is a schematic cross-sectional view,of a conventional vapor deposition mask, schematically showing the stateof transmitted light being transmitted through the openings 25 and theregion not formed with openings in the occasion when the vapordeposition mask is irradiated with visible light. As comparison, also inFIGS. 8(a) to 8(c), the states of transmitted light being transmittedthrough the openings 25 and the region not formed with openings areschematically shown.

In order to confirm predominance of the resin mask set to have about 40%or less of light ray transmittance at a wavelength of about 550 nm,Samples 1 to 10 of the resin mask shown in Table 1 below were preparedto confirm the tone of shade. FIG. 12 shows shade images. Notably, FIG.12(a) corresponds to Sample 1, FIG. 12(b) to Sample 2, FIG. 12(c) toSample 4, FIG. 12(d) to Sample 5, and FIG. 12(e) to Sample 6. Sample 8resulted in the contrast equivalent to that of the shade image shown inFIG. 12(c). Samples 3, 7, 9 and 10 resulted in slightly less contraststhan that of the shade image shown in FIG. 12(c). Measurements of lightray transmittances at about 550 nm, about 450 to 650 nm and about 380 to780 nm of wavelengths were performed using a spectrometer (MPC-3100,Shimadzu Corporation). As a shade imaging apparatus, an appearancedefect inspection apparatus (image processing apparatus: MP72000, TakanoCo. Ltd.) was used, to observe transmitted light with a white lightsource. Moreover, the shape of the opening in plan view was set to be 50μm squared (50 μm×50 μm). Evaluation results in the table were derivedbased on the following criteria. Moreover, for Samples 9 and 10, rediron oxide was used as the color material component in place of carbonblack, and adjustment was performed such that the transmittance at eachwavelength was the transmittance shown in Table 1 below.

(Evaluation Criteria of Samples)

1 . . . Openings cannot be recognized with shade.

2 . . . Contrast in tone of shade of the openings is low and defectinspection of the openings cannot be sufficiently performed.

3 . . . While the contrast in tone of shade of the openings appears tosuch an extent that defect inspection of the openings can be performed,there is a slight possibility of missing defects of the openings.

4 . . . Contrast in tone of shade of the openings is high and there isalmost no possibility of missing defects of the openings.

5 . . . Contrast in tone of shade of the openings is extremely high anddefect inspection precision of the openings is extremely high.

TABLE 1 Blending Thickness of Amount of Resin Mask Carbon Transmittance(%) Evaluation (μm) Black (*1) 550 nm 450-650 nm (*2) 380-780 nm (*3)Result Sample 1 7 0 89 90 92 1 Sample 2 8 0.5 61 65 70 2 Sample 3 8 1 4046 50 3 Sample 4 7 2 30 37 40 4 Sample 5 6 4 4 7 9 5 Sample 6 4 6 2 4 55 Sample 7 50 0 25 46 53 3 Sample 8 8 1.3 35 39 45 4 Sample 9 7 Red IronOxide 30 57 60 3 Sample 10 6 Red Iron Oxide 40 68 70 3 (*1) . . . Pts.Mass of Carbon Black to 100 Pts. Mass of Polyimide Resin (*2) . . .Maximum Value at 450 to 650 nm (*3) . . . Maximum Value at 380 to 780 nm

While in the mode shown in the figure, the opening shape of the opening25 exhibits a rectangular shape, the opening shape is not speciallylimited but the opening shape of the opening 25 may be rhombic orpolygonal or may be a shape having a curvature such as a circle and anellipsoid. Notably, it can be said that the rectangular or polygonalopening shape is a preferable opening shape of the opening 25 in view ofcapability of securing a larger area of light emission as compared withthe opening shape having a curvature such as a circle and an ellipsoid.

The sectional shape of the opening 25 is not specially limited and endsurfaces that face each other and are of the resin mask forming theopening 25 may be substantially parallel to each other, but as shown inFIG. 1(b), the sectional shape of the opening 25 is preferably the shapehaving broadening toward a vapor deposition source. In other words, itpreferably has a taper surface having broadening toward the metal mask10 side. While a taper angle can be properly set with the thickness orthe like of the resin mask 20 taken into consideration, an angle formedby a straight line connecting a lower bottom distal end in the openingof the resin mask and an upper bottom distal end of the opening of thesame resin mask and the bottom surface of the resin mask, in otherwords, an angle formed by an inner wall surface of the opening 25 and asurface of the resin mask 20 on the side that is not in contact with themetal mask 10 (a lower surface of the resin mask in the mode shown inthe figure) in the cross section in the thickness direction of the innerwall surface constituting the opening 25 of the resin mask 20 ispreferably within a range of about 5° to about 85°, still preferablywithin a range of about 15° to about 75°, further preferably within arange of about 25° to about 65°. In particular, within this range, it ispreferably an angle smaller than a vapor deposition angle of a vapordeposition machine to be used. Moreover, in the mode shown in thefigure, while an end surface that forms the opening 25 exhibits a linearshape, it is not limited thereto but may be in a curved shape convexoutward, in other words, a shape of the entirety of the opening 25 maybe a bowl shape.

(Metal Mask)

As shown in FIG. 1(b), the metal mask 10 is stacked on one surface ofthe resin mask 20. The metal mask 10 is constituted of metal, in whichthe slits 15 extending in the lengthwise direction or the crosswisedirection are arranged. The slit 15 is synonymous with an opening. Anarrangement example of the slits is not specially limited. The slitsextending in the lengthwise direction and the crosswise direction may bearranged in a plurality of rows in the lengthwise direction and thecrosswise direction. The slits extending in the lengthwise direction maybe arranged in a plurality of rows in the crosswise direction. The slitsextending in the crosswise direction may be arranged in a plurality ofrows in the lengthwise direction. Moreover, they may be arranged in onlyone row in the lengthwise direction or the crosswise direction. Notably,“lengthwise direction” and “crosswise direction” stated in the presentspecification indicate the vertical direction and the horizontaldirection in the drawings, respectively, and may be any directions ofthe longitudinal direction and the width direction. For example, thelongitudinal direction of the vapor deposition mask, the resin mask andthe metal mask may be set to be the “lengthwise direction”, or the widthdirection thereof may be set to be the “lengthwise direction”. Moreover,while in the present specification, the case where the shape of thevapor deposition mask in plan view is a rectangular shape is exemplarilydescribed, it may be another shape such, for example, as a circularshape and a rhombic shape. In this case, the longitudinal direction ofthe diagonal line, the radial direction, or any direction only has to beset as the “longitudinal direction”, the direction perpendicular to the“longitudinal direction” set as the “width direction (sometimes referredto as short-side direction)”.

The material of the metal mask 10 is not specially limited but aconventionally known one in the field of the vapor deposition mask canbe properly selected and used, and, for example, a metal material suchas stainless steel, an iron-nickel alloy and an aluminum alloy can becited. Above all, an invar material which is an iron-nickel alloy can bepreferably used since an invar material is hardly deformed by heat.

Moreover, when vapor deposition is performed on the vapor-depositedsurface of the vapor deposition target using the vapor deposition mask100 of an embodiment, in the case where a magnet or the like is neededto be disposed behind the vapor deposition target to cause the vapordeposition mask 100 in front of the vapor deposition target to beattracted with magnetic force, it is preferable to form the metal mask10 of a magnetic body. As the metal mask 10 of the magnetic body, ironnickel alloy, pure iron, carbon steel, tungsten (W) steel, chromium (Cr)steel, cobalt (Co) steel, KS steel which is alloy of iron containingcobalt, tungsten, chromium and carbon, MK steel having main componentsof iron, nickel and aluminum, NKS steel obtained by adding cobalt andtitanium to MK steel, Cu—Ni—Co steel, aluminum (Al)-iron (Fe) alloy, andthe like can be cited. Moreover, when the material itself forming themetal mask 10 is not a magnetic body, magnetism may be given to themetal mask 10 by dispersing powder of the aforementioned magnetic bodyin the relevant material.

While the thickness of the metal mask 10 is not specially limited, inorder to more effectively prevent generation of a shadow, it ispreferably about 100 μm or less, still preferably about 50 μm or less,particularly preferably about 35 μm or less. Notably, in the case ofbeing thinner than about 5 μm, risks of rupture and deformation tend toincrease and handling tends to become difficult.

Moreover, while in the mode shown in FIG. 1(a), the shape of the openingof the slit 15 in plan view exhibits a rectangular shape, the openingshape is not specially limited but the opening shape of the slit 15 maybe any shape such as a trapezoid and a circle. The same holds true forthe shape of the opening 25 of the resin mask 20.

The sectional shape of the slit 15 formed in the metal mask 10 is notspecially limited but is preferably a shape having broadening toward thevapor deposition source as shown in FIG. 1(b). More specifically, anangle formed by a straight line connecting the lower bottom distal endin the slit 15 of the metal mask 10 with the upper bottom distal end inthe same slit 15 of the same metal mask 10 and the bottom surface of themetal mask 10, in other words, an angle formed by the inner wall surfaceof the slit 15 and the surface of the metal mask 10 on the side of beingin contact with the resin mask 20 (the lower surface of the metal maskin the shown mode) in the cross section in the thickness direction ofthe inner wall surface constituting the slit 15 of the metal mask 10 ispreferably within a range of about 5° to about 85°, still preferablywithin a range of about 15° to about 80°, further preferably within arange of about 25° to about 65°. In particular, within this range, it ispreferably an angle smaller than a vapor deposition angle of a vapordeposition machine to be used.

A method of stacking the metal mask 10 on the resin mask is notspecially limited but the metal mask 10 may be pasted on the resin mask20 using various adhesive agents or the resin mask that hasself-adhesion may be used. The dimensions of the resin mask 20 and themetal mask 10 may be the same or may be different dimensions. Notably,with fixing to a frame which is arbitrarily performed afterward takeninto consideration, the dimension of the resin mask 20 is preferablymade smaller than that of the metal mask 10 to set the outercircumferential portion of the metal mask 10 to be in the state ofexposure, which facilitates welding of the metal mask 10 to the frame.

Hereafter, preferable modes of the vapor deposition mask are described,exemplified by Embodiment (A) and Embodiment (B). Notably, the vapordeposition mask 100 of an embodiment of the present invention is notlimited to the modes described below but may be in any mode as long as acondition is satisfied that the metal mask 10 in which the slit 15 isformed is stacked on the resin mask 20 in which the openings 25corresponding to a pattern to be produced by vapor deposition are formedat a position overlapping with the slit 15. For example, the slit 15formed in the metal mask 10 may be stripe-shaped (not shown). Moreover,the slit 15 of the metal mask 10 may be provided at a position notoverlapping with the whole one screen. In any mode, by setting the resinmask 20 to have about 40% or less of light ray transmittance at awavelength of about 550 nm, when it is inspected whether or not theopenings 25 of the resin mask 20 meet the vapor deposition pattern theformation of which is desired on the vapor-deposited surface of thevapor deposition target, the contrast in tone of shade can be enhancedand the edge part of the opening pattern of the openings 25 can becorrectly grasped.

<Vapor Deposition Mask of Embodiment (A)>

As shown in FIG. 2, the vapor deposition mask 100 of Embodiment (A) is avapor deposition mask for simultaneously forming vapor depositionpatterns for a plurality of screens and includes the metal mask 10 inwhich the plurality of slits 15 are provided and the resin mask 20, themetal mask being stacked on one surface of the resin mask, wherein theopenings 25 needed for constituting the plurality of screens areprovided in the resin mask 20, and each slit 15 is provided at aposition overlapping with the entirety of at least one screen. Also inthe vapor deposition mask 100 of Embodiment (A), the resin mask 20 isset to have about 40% or less of light ray transmittance at a wavelengthof about 550 nm.

The vapor deposition mask 100 of Embodiment (A) is a vapor depositionmask used for simultaneously forming vapor deposition patterns for aplurality of screens. One vapor deposition mask 100 can simultaneouslyform vapor deposition patterns compatible with a plurality of products.“Openings” stated for the vapor deposition mask of Embodiment (A) meanpatterns to be produced using the vapor deposition masks 100 ofEmbodiment (A). For example, when the vapor deposition mask is used forforming an organic layer in an organic EL display, the shape of theopenings 25 is a shape of the organic layer. Moreover, “one screen” isconstituted of an aggregate of openings 25 corresponding to one product.When the one product is an organic EL display, an aggregate of organiclayers needed for forming one organic EL display, in other words, anaggregate of openings 25 to be the organic layers is “one screen”.Further, in the vapor deposition mask 100 of Embodiment (A), in order tosimultaneously form the vapor deposition patterns for the plurality ofscreens, the aforementioned “one screen” is arranged for each of theplurality of screens in the resin mask 20 at predetermined intervals.Namely, in the resin mask 20, the openings 25 needed for constitutingthe plurality of screens are provided.

The vapor deposition mask of Embodiment (A) includes the metal mask 10in which the plurality of slits 15 are provided, the metal mask beingprovided on one surface of the resin mask, wherein each slit is providedat the position overlapping with the entirety of at least one screen. Inother words, it is characterized in that between the openings 25 neededfor constituting one screen, metal line portions which have the samelength as the length of the slit 15 in the lengthwise direction and havethe same thickness as that of the metal mask 10 between the openings 25adjacent in the crosswise direction, or metal line portions which havethe same length as the length of the slit 15 in the crosswise directionand have the same thickness as that of the metal mask 10 between theopenings 25 adjacent in the lengthwise direction do not exist.Hereafter, the metal line portions which have the same length as thelength of the slit 15 in the lengthwise direction and have the samethickness as that of the metal mask 10 and the metal line portions whichhave the same length as the length of the slit 15 in the crosswisedirection and have the same thickness as that of the metal mask 10 aresometimes collectively referred to simply as metal line portions.

According to the vapor deposition mask 100 of Embodiment (A), even whenthe dimension of the openings 25 needed for constituting one screen andthe pitch between the openings 25 constituting one screen are madesmall, for example, even when the dimension of the openings 25 and thepitch between the openings 25 are made extremely fine in order to form ascreen exceeding 400 ppi, interference due to metal line portions can beprevented and an image with high definition can be formed. Notably, whenone screen is divided by a plurality of slits, in other words, when themetal line portions having the same thickness as that of the metal mask10 exist between the openings 25 constituting one screen, as the pitchbetween the openings 25 constituting one screen is smaller, the metalline portions existing between the openings 25 more become a hindrancein forming the vapor deposition pattern on the vapor deposition targetand the vapor deposition pattern with high definition is more difficultto be formed. In other words, when the metal line portions having thesame thickness as that of the metal mask 10 exist between the openings25 constituting one screen, the metal line portions in the case ofsetting the frame-equipped vapor deposition mask cause generation of ashadow, which results in difficulty of formation of a screen with highdefinition.

Next, referring to FIG. 2 to FIG. 6, the openings 25 constituting onescreen are exemplarily described. Notably, a region enclosed by a brokenline in the modes shown in the figures is one screen. While in the modesshown in the figures, an aggregate of a small number of openings 25 isone screen for convenience of description, not limited to these modes,for example, the openings 25 for millions of pixels may be present inone screen, where one opening 25 is one pixel.

In the mode shown in FIG. 2, one screen is constituted of an aggregateof openings 25 having a plurality of openings 25 provided in thelengthwise direction and the crosswise direction. In the mode shown inFIG. 3, one screen is constituted of an aggregate of openings 25 havinga plurality of openings 25 provided in the crosswise direction.Moreover, in the mode shown in FIG. 4, one screen is constituted of anaggregate of openings 25 having a plurality of openings 25 in thelengthwise direction. Further, in FIG. 2 to FIG. 4, the slit 15 isprovided at a position overlapping with the entirety of one screen.

As described above, the slit 15 may be provided at a positionoverlapping with only one screen, or as shown in FIGS. 5(a) and 5(b),may be provided at a position overlapping with the entirety of two ormore screens. In FIG. 5(a), in the resin mask 10 shown in FIG. 2, theslit 15 is provided at a position overlapping with the entirety of twoscreens continuous in the crosswise direction. In FIG. 5(b), the slit 15is provided at a position overlapping with the entirety of three screenscontinuous in the lengthwise direction.

Next, exemplified by the mode shown in FIG. 2, pitches between theopenings 25 constituting one screen and pitches between the screens aredescribed. The pitches between the openings 25 constituting one screenand the dimension of the opening 25 are not specially limited but can beproperly set depending on the pattern to be produced by vapordeposition. For example, when forming the vapor deposition pattern withhigh definition of 400 ppi, a pitch (P1) in the crosswise direction anda pitch (P2) in the lengthwise direction between the neighboringopenings 25 out of the openings 25 constituting one screen are about 60μm. Moreover, the dimension of the opening is about 500 μm² to about1000 μm². Moreover, one opening 25 is not limited to correspond to onepixel but, for example, a plurality of pixels can also be collectivelyone opening 25 depending on a pixel arrangement.

While a pitch (P3) in the crosswise direction and a pitch (P4) in thelengthwise direction between the screens are not specially limited but,as shown in FIG. 2, when one slit 15 is provided at the positionoverlapping with the entirety of one screen, metal line portions are toexist between the screens. Accordingly, when the pitch (P3) in thecrosswise direction and the pitch (P4) in the lengthwise directionbetween the screens are smaller than or substantially equal to the pitch(P1) in the crosswise direction and the pitch (P2) in the lengthwisedirection of the openings 25 provided in one screen, the metal lineportions existing between the screens are liable to break. Accordingly,with this point taken into consideration, the pitch (P3, P4) between thescreens is preferably wider than the pitch (P1, P2) between the openings25 constituting one screen. The pitch (P3, P4) between the screens isexemplarily about 1 mm to about 100 mm. Notably, the pitch between thescreens means the pitch between the neighboring openings in one screenand another screen adjacent to the one screen. The same holds true forthe pitch between the openings 25 and the pitch between the screens inthe vapor deposition mask of Embodiment (B) mentioned later.

Notably, as shown in FIG. 5, when one slit 15 is provided at theposition overlapping with the entirety of two or more screens, metalline portions constituting the inner wall surfaces of the slit are notto exist between the plurality of screens provided in the one slit 15.Accordingly, in this case, the pitch between the two or more screensprovided at the position overlapping with the one slit 15 may besubstantially equal to the pitch between the openings 25 constitutingone screen.

<Vapor Deposition Mask of Embodiment (B)>

Next, the vapor deposition mask of Embodiment (B) is described. As shownin FIG. 6, the vapor deposition mask of Embodiment (B) includes themetal mask 10 in which one slit (one through hole 16) is provided andthe resin mask 20 in which the plurality of openings 25 corresponding toa pattern to be produced by vapor deposition are provided, the metalmask being stacked on one surface of resin mask, wherein all of theplurality of openings 25 are provided at a position overlapping with theone through hole provided in the metal mask 10.

The opening 25 stated for Embodiment (B) means an opening needed forforming the vapor deposition pattern on the vapor deposition target. Anopening not needed for forming the vapor deposition pattern on the vapordeposition target may be provided at a position of not overlapping withthe one through hole 16. Notably, FIG. 6 is an elevation view whichexemplarily shows the vapor deposition mask of Embodiment (B) and is ofthe vapor deposition mask as seen from the metal mask side.

In the vapor deposition mask 100 of Embodiment (B), the metal mask 10having the one through hole 16 is provided on the resin mask 20 havingthe plurality of openings 25, and all of the plurality of openings 25are provided at a position overlapping with the one through hole 16. Inthe vapor deposition mask 100 of Embodiment (B) that has thisconfiguration, metal line portions that have the same thickness as thethickness of the metal mask or a larger thickness than the thickness ofthe metal mask do not exist between the openings 25. Hence, as describedfor the aforementioned vapor deposition mask of Embodiment (A), thevapor deposition pattern with high definition can be formed to match thedimensions of the openings 25 provided in the resin mask 20 withoutsuffering interference of metal line portions.

Moreover, according to the vapor deposition mask of Embodiment (B),there is almost no influence of a shadow even when the thickness of themetal mask 10 is made large. Hence, the thickness of the metal mask 10can be made larger to such an extent that durability and handlingability are sufficiently satisfied. While a vapor deposition patternwith high definition can be formed, durability and handling ability canbe improved.

The resin mask 20 in the vapor deposition mask of Embodiment (B) isconstituted of resin, in which as shown in FIG. 6, the plurality ofopenings 25 corresponding to a pattern to be produced by vapordeposition are provided at a position overlapping with the one throughhole 16. The openings 25 correspond to the pattern to be produced byvapor deposition. By a vapor deposition material released from a vapordeposition source passing through the openings 25, the vapor depositionpattern corresponding to the openings 25 is formed on the vapordeposition target.

Notably, while in the mode shown in the figure, the openings arranged ina plurality of rows in the lengthwise direction and the crosswisedirection are exemplarily described, they may be arranged only in thelengthwise direction or in the crosswise direction. Also in the vapordeposition mask 100 of Embodiment (B), the resin mask 20 is set to haveabout 40% or less of light ray transmittance at a wavelength of about550 nm.

“One screen” in the vapor deposition mask 100 of Embodiment (B) means anaggregate of openings 25 corresponding to one product. When the oneproduct is an organic EL display, an aggregate of organic layers neededfor forming one organic EL display, in other words, an aggregate ofopenings 25 to be the organic layers is “one screen”. While the vapordeposition mask of Embodiment (B) may be constituted of only “onescreen” or may be provided by arranging the “one screen” for each of aplurality of screens, in the case where the “one screen” is arranged foreach of the plurality of screens, the openings 25 are preferablyprovided at predetermined intervals on a screen-by-screen basis (referto FIG. 5 for the vapor deposition mask of Embodiment (A)). The mode of“one screen” is not specially limited but, for example, the one screencan also be constituted of millions of openings 25, where one opening 25is one pixel.

(Metal Mask)

The metal mask 10 in the vapor deposition mask 100 of Embodiment (B) isconstituted of metal and includes the one through hole 16. Further, inan embodiment of the present invention, the one through hole 16 isdisposed at a position overlapping with all of the openings 25 as seenhead-on of the metal mask 10, in other words, at a position where all ofthe openings 25 arranged in the resin mask 20 can be seen.

The metal portion constituting the metal mask 10, that is, the portionthereof other than the one through hole 16 may be provided along theouter edge of the vapor deposition mask 100 as shown in FIG. 6, or thedimension of the metal mask 10 may be made smaller than that of theresin mask 20 to expose an outer circumferential portion of the resinmask 20 as shown in FIG. 7. Moreover, the dimension of the metal mask 10may be made larger than that of the resin mask 20, so that a part of themetal portion is caused to protrude outward in the crosswise directionof the resin mask or outward in the lengthwise direction thereof.Notably, in any cases, the dimension of the one through hole 16 isconfigured to be smaller than the dimension of the resin mask 20.

While a width (W1), in the crosswise direction, and a width (W2), in thelengthwise direction, of the metal portion constituting the wall surfaceof the through hole 16 of the metal mask 10 shown in FIG. 6 are notspecially limited, as the width W1, W2 is made smaller, durability andhandling ability tend to deteriorate more. Accordingly, W1 and W2 arepreferably widths by which durability and handling ability aresufficiently satisfied. While appropriate widths can be properly setdepending on the thickness of the metal mask 10, as an example ofpreferable widths, both W1 and W2 are about 1 mm to about 100 mm, whichare the same widths of the metal mask of Embodiment (A).

Moreover, while in the vapor deposition mask of each embodimentdescribed above, the openings 25 are regularly formed in the resin mask20, the openings 25 may be alternately arranged in the crosswisedirection or the lengthwise direction as seen from the metal mask 10side of the vapor deposition mask 100 (not shown). In other words, theopenings 25 adjacent in the crosswise direction may be displaced andarranged in the lengthwise direction. In such an arrangement, even inthe case of thermal expansion of the resin mask 20, the openings 25 canabsorb expansions arising in portions therein, and a large deformationdue to accumulation of the expansions can be prevented from arising.

Moreover, in the vapor deposition mask of each embodiment describedabove, on the resin mask 20, grooves (not shown) extending in thelengthwise direction or the crosswise direction of the resin mask 20 maybe formed. While in the case of application of heat in vapor deposition,there is a possibility that the resin mask 20 undergoes thermalexpansion, and thereby, changes in dimension and position of the opening25 arise, by forming the grooves, they can absorb the expansion of theresin mask, and can prevent the changes in dimension and position of theopening 25 caused by the resin mask 20 expanding in a predetermineddirection as a whole due to accumulation of thermal expansions arisingin portions in the resin mask. Formation positions of the grooves arenot limited but while they may be provided between the openings 25constituting one screen and at positions overlapping with the openings25, they are preferably provided between the screens. Moreover, thegrooves may be provided on one surface of the resin mask, for example,only on the surface on the side that is in contact with the metal mask,or may be provided only on the surface on the side that is not incontact with the metal mask. Otherwise, they may be provided on bothsurfaces of the resin mask 20.

Moreover, the grooves extending in the lengthwise direction may bebetween the neighboring screens, or the grooves extending in thecrosswise direction may be formed between the neighboring screens.Furthermore, the grooves can also be formed in an aspect having thesecombined.

The depth and the width of the grooves are not specially limited butsince the rigidity of the resin mask 20 tends to decrease in the casewhere the depth of the grooves is too large and in the case where thewidth thereof is too large, setting is needed with this point taken intoconsideration. Moreover, the sectional shape of the grooves is notspecially limited but only has to be arbitrarily selected as a U-shape,a V-shape or the like with the processing method and the like taken intoconsideration. The same holds true for the vapor deposition mask ofEmbodiment (B).

<<Method for Producing Vapor Deposition Mask>>

Hereafter, the method for producing a vapor deposition mask of anembodiment is exemplarily described. The vapor deposition mask 100 of anembodiment can be obtained by preparing the resin plate-equipped metalmask in which the metal mask 10 provided with the slits 15 is stacked onone surface of the resin plate, and next, irradiating the resinplate-equipped metal mask with laser through the slits 15 from the metalmask 10 side to form the openings 25 corresponding to a pattern to beproduced by vapor deposition in the resin plate.

As a method of forming the resin plate-equipped metal mask, the metalmask 10 provided with the slits 15 is stacked on one surface of theresin plate. The resin plate can employ the materials described for theaforementioned resin mask 20. Moreover, in the case of setting theaforementioned resin mask in the first device, the resin plate containsthe color material component and the resin plate has about 40% or lessof light ray transmittance at a wavelength of about 550 nm.

As the method for forming the metal mask 10 in which the slits 15 areprovided, a masking member, for example, a resist material is appliedonto the surface of the metal plate, predetermined portions thereof areexposed and developed, and thereby, a resist pattern in which positionswhere the slits 15 are finally to be formed remain is formed. The resistmaterial used as the masking member is preferably excellent inprocessing ability with desired resolution. Next, etching processing isperformed by an etching method using the resist pattern as an etchingresistant mask. After the completion of the etching, the resist patternis cleaned and removed. In this way, the metal mask 10 in which theslits 15 are provided is obtained. The etching for forming the slits 15may be performed on one surface side of the metal plate or may beperformed on both surfaces thereof. Moreover, in the case where theslits 15 are formed in the metal plate using the stacked body in whichthe resin plate is provided on the metal plate, the masking member isapplied onto the surface of the metal plate on the side that is not incontact with the resin plate, and the slits 15 are formed by the etchingfrom one surface side. Notably, in the case where the resin plate hasetching resistance with respect to the etching agent for the metalplate, masking of the surface of the resin plate is not needed but, inthe case where the resin plate does not have resistance with respect tothe etching agent for the metal plate, the masking member is needed tobe applied onto the surface of the resin plate. Moreover, in the above,while the resist material is mainly described as the masking member, inplace of the application of the resist material, a dry film resist maybe laminated to perform the similar patterning.

In the aforementioned method, the resin plate constituting the resinplate-equipped metal mask may be a resin layer or a resin film formed bycoating as well as a plate-shaped resin. In other words, the resin platemay be beforehand prepared, or in the case of forming the resinplate-equipped metal mask using the metal plate and the resin plate, theresin layer or the resin film to be the resin mask in the final stagecan also be formed on the metal plate by a conventionally known coatingmethod or the like. For example, in the case of setting theaforementioned resin mask in the first device, resin plate coatingliquid obtained by dispersing or dissolving the material of the resinmask and the color material component which are described above andarbitrary components added as needed in an appropriate solvent isprepared, the metal plate is coated with this using a conventionallyknown coating device to be dried, and thereby, the resin plate can beset for obtaining the aforementioned resin mask 20 in the first device.

As a method for forming the openings 25, the resin plate is penetratedusing a laser processing method, fine press processing, photolithographyprocessing or the like on the resin plate-equipped metal mask preparedabove to form the openings 25 corresponding to a pattern to be producedby vapor deposition in the resin plate, and thereby, the vapordeposition mask 100 of an embodiment in which the metal mask 10 in whichthe slit 15 is provided is stacked on one surface of the resin mask 20in which the openings 25 corresponding to the pattern to be produced byvapor deposition are provided is obtained. Notably, in view ofcapability of easily forming the openings 25 with high definition, thelaser processing method is preferably used for the formation of theopenings 25.

In the case of setting the aforementioned resin mask in the seconddevice, before forming the openings 25, the color material layer 40 maybe formed on the resin plate to form the openings 25 penetrating thecolor material layer 40 and the resin plate, or after forming theopenings 25 penetrating the resin plate to obtain the resin mask 20, thecolor material layer 40 may be formed on the region not formed withopenings in the resin mask 20.

Moreover, in the stage before forming the openings 25 in the resinplate, the resin plate-equipped metal mask may be fixed to a frame. Bynot fixing the completed vapor deposition mask to the frame butafterward providing the openings with respect to the resinplate-equipped metal mask in the state of being fixed to the frame,position precision can be exceedingly improved. Notably, when thecompleted vapor deposition mask 100 is fixed to the frame, since themetal mask in which the opening is determined is fixed while beingstretched with respect to the frame, opening position coordinationprecision is to deteriorate. A method for fixing a frame 60 and theresin plate-equipped vapor deposition mask to each other is notspecially limited but the fixation can be performed using spot weldingof fixation with laser light or the like, an adhesive agent, screwfastening, or another method other than these.

<<Frame-Equipped Vapor Deposition Mask>>

Next, a frame-equipped vapor deposition mask of an embodiment of thepresent invention is described. As shown in FIGS. 9 and 10, theframe-equipped vapor deposition mask 200 of an embodiment of the presentinvention is constituted by fixing the vapor deposition mask 100 ontothe frame 60, wherein the vapor deposition mask 100 includes the metalmask 10 in which the slit 15 is formed and the resin mask 20 in whichthe openings 25 corresponding to a pattern to be produced by vapordeposition are formed at a position overlapping with the slit, the metalmask and the resin mask being stacked, and the resin mask 20 has about40% or less of light ray transmittance at a wavelength of about 550 nm.According to the frame-equipped vapor deposition mask 200 having thisfeature, while satisfying both high definition and lightweight,confirmation of whether or not a shape pattern of openings formed in theresin mask 20 is normal or similar confirmation can be correctlyperformed even after fixing the vapor deposition mask 100 to the frame60.

In the frame-equipped vapor deposition mask 200 of an embodiment of thepresent invention, as shown in FIG. 9, one vapor deposition mask 100 maybe fixed to the frame 60, or as shown in FIG. 10, a plurality of vapordeposition masks 100 may be fixed to the frame 60.

(Vapor Deposition Mask)

For the vapor deposition mask 100 constituting the frame-equipped vapordeposition mask 200, the vapor deposition mask 100 of an embodiment ofthe present invention described above can be used as it is, and detaileddescription thereof is omitted here. Notably, the vapor deposition maskof an embodiment stated here is supposed to also include the vapordeposition masks in the preferable modes described above (vapordeposition masks of Embodiment (A) and Embodiment (B)).

(Frame)

The frame 60 is a substantially rectangular frame member and includes athrough hole for exposing the openings 25 provided in the resin mask 20of the vapor deposition mask 100 fixed in the final stage to the vapordeposition source side. The material of the frame is not speciallylimited but a metal material large in rigidity, for example, a SUS orinvar material or a ceramic material or the like can be used. Above all,a metal frame is preferable in view of being able to easily performwelding to the metal mask of the vapor deposition mask and being smallin influence of deformation and the like.

The thickness of the frame is not specially limited but is preferablyabout 10 mm to 30 mm in view of rigidity and the like. The widths of theinner circumferential end face of the opening of the frame and the outercircumferential end face of the frame are not specially limited as longas they are widths with which the frame and the metal mask of the vapordeposition mask can be fixed to each other, but, for example, widths ofabout 10 mm to 50 mm can be exemplarily cited.

Moreover, as shown in FIGS. 11(a) to 11(c), the frame 60 in whichreinforcement frames 65 and the like are provided in the region of thethrough hole may be used so as not to disturb exposure of the openings25 of the resin mask 20 constituting the vapor deposition mask 100. Inother words, a configuration in which the opening included in the frame60 is divided by the reinforcement frames and the like may be included.To provide the reinforcement frames 65 enables the frame 60 and thevapor deposition mask 100 to be fixed to each other using the relevantreinforcement frames 65. Specifically, when a plurality of vapordeposition masks 100 described above are arranged and fixed in thelengthwise direction and the crosswise direction, the vapor depositionmasks 100 can be fixed to the frame 60 also at positions where thereinforcement frames and the vapor deposition masks overlap with eachother.

A method for fixing the frame 60 and the vapor deposition mask 100 toeach other is not specially limited but the fixation can be performedusing spot welding of fixation with laser light or the like, an adhesiveagent, screw fastening, or another method other than these.

<<Vapor Deposition Mask Preparation Body>>

Next, a vapor deposition mask preparation body of an embodiment of thepresent invention is described. The vapor deposition mask preparationbody of an embodiment of the present invention (not shown) is used forobtaining the vapor deposition mask including the metal mask 10 in whichthe slit 15 is formed and the resin mask 20 in which the openings 25corresponding to a pattern to be produced by vapor deposition are formedat a position overlapping with the slit, the metal mask and the resinmask being stacked, wherein the metal mask in which the slit is providedis stacked on one surface of a resin plate, and the resin plate hasabout 40% or less of light ray transmittance at a wavelength of about550 nm.

The vapor deposition mask preparation body of an embodiment of thepresent invention is common to the vapor deposition mask 100 of anembodiment described above except that the openings 25 are not providedin the resin plate, and specific description thereof is omitted. As aspecific configuration of the vapor deposition mask preparation body ofan embodiment, the resin plate-equipped metal mask described for theaforementioned method for producing a vapor deposition mask can becited.

According to the aforementioned vapor deposition mask preparation bodyof an embodiment, by forming the openings in the resin plate of thevapor deposition mask preparation body, the vapor deposition mask can beobtained capable of correctly performing confirmation of whether or nota shape pattern of openings formed in the resin mask is normal orsimilar confirmation while satisfying both high definition andlightweight.

While in the above, as the vapor deposition mask preparation body, theresin plate-equipped metal mask is exemplarily described in which themetal mask in which the slit is provided is stacked on one surface ofthe resin plate having about 40% or less of light ray transmittance at awavelength of about 550 nm, a resin plate-equipped metal plate in whicha metal plate for forming the metal mask is stacked on one surface ofthe resin plate having about 40% or less of light ray transmittance at awavelength of about 550 nm may be set to be the vapor deposition maskpreparation body. With this vapor deposition mask preparation body, theslit is formed in the metal plate of the resin plate-equipped metalplate, next, the openings overlapping with the slit formed in the metalplate are formed in the resin plate, and thereby, the vapor depositionmask of an embodiment described above can be obtained.

(Method for Producing Organic Semiconductor Element)

Next, a method for producing an organic semiconductor element of anembodiment of the present invention is described. The method forproducing an organic semiconductor element of an embodiment includes astep of forming a vapor deposition pattern on a vapor deposition targetusing a frame-equipped vapor deposition mask in which a vapor depositionmask is fixed to a frame, wherein in the step of forming the vapordeposition pattern, the vapor deposition mask fixed to the frameincludes a metal mask in which a slit is formed and a resin mask inwhich an opening corresponding to a pattern to be produced by vapordeposition is formed at a position overlapping with the slit, the metalmask and the resin mask being stacked, and further, the resin mask hasabout 40% or less of light ray transmittance at a wavelength of about550 nm.

The method for producing an organic semiconductor element of anembodiment including the step of forming a vapor deposition pattern in avapor deposition method using the frame-equipped vapor deposition maskincludes an electrode forming step, an organic layer forming step, acounter electrode forming step, a sealing layer forming step and thelike in which electrodes are formed on a substrate, and in any of thesteps, a vapor deposition pattern is formed on the substrate in a vapordeposition method using the frame-equipped vapor deposition mask. Forexample, in the case where the vapor deposition method using theframe-equipped vapor deposition mask is applied to each oflight-emitting layer forming steps for colors of R, G and B in anorganic EL device, vapor deposition patterns are formed for thelight-emitting layers for the colors on the substrate. Notably, themethod for producing an organic semiconductor element of an embodimentof the present invention is not limited to these steps but can beapplied to any steps in conventionally known production of an organicsemiconductor element using a vapor deposition method.

The method for producing an organic semiconductor element of anembodiment of the present invention is characterized in that theaforementioned frame-equipped vapor deposition mask which is used in thestep of forming the vapor deposition pattern and in which the vapordeposition mask is fixed to the frame is the frame-equipped vapordeposition mask 200 of an embodiment of the present invention describedabove, and detailed description thereof is omitted here. According tothe method for producing an organic semiconductor element using theframe-equipped vapor deposition mask, an organic semiconductor elementhaving a pattern with high definition can be formed. As organicsemiconductor elements produced in the method for producing an organicsemiconductor element of an embodiment of the present invention, forexample, organic layers, light-emitting layers, cathode electrodes andthe like of organic EL elements can be cited. In particular, the methodfor producing an organic semiconductor element of an embodiment of thepresent invention can be preferably used for production of R, G and Blight-emitting layers of organic EL elements which require patternprecision with high definition.

(Method for Inspecting Vapor Deposition Mask)

Next, a method for inspecting a vapor deposition mask of an embodimentis described. The method for inspecting a vapor deposition mask of anembodiment is a method of irradiating a vapor deposition mask includinga metal mask in which a slit is provided and a resin mask in whichopenings are provided at a position overlapping with the slit, the metalmask and the resin mask being stacked, with visible light, andperforming appearance inspection of the openings provided in the resinmask on the basis of contrast between a region which transmits thevisible light and a region which does not transmit or hardly transmitthe visible light in the resin mask, wherein the vapor deposition maskirradiated with the visible light is the vapor deposition mask of anembodiment described above.

According to the method for inspecting a vapor deposition mask of anembodiment, since the vapor deposition mask used in the inspectingmethod is the vapor deposition mask including the resin mask havingabout 40% of light ray transmittance at a wavelength of about 550 nm,the contrast in tone of shade imaged can be enhanced, and inspectionprecision of the openings provided in the resin mask can be improved.For the vapor deposition mask, the vapor deposition mask of anembodiment described above can be used as it is, and detaileddescription thereof is omitted here.

The irradiation direction of visible light is not specially limited butirradiation with visible light may be performed from the metal mask sideof the vapor deposition mask, or the irradiation with visible light maybe performed from the resin mask side of the vapor deposition mask. Avisible light irradiation apparatus is not limited but a conventionallyknown apparatus that can perform irradiation with visible light can beproperly selected and used. The visible light used in the method forinspecting a vapor deposition mask of an embodiment is not speciallylimited but, for example, a light ray containing a component at awavelength of about 550 nm, such as white light, can be cited.

As above, for the best mode in an embodiment of the present invention,the vapor deposition mask including the resin mask 20 having about 40%or less of light ray transmittance at a wavelength of about 550 nm andthe vapor deposition mask preparation body for obtaining this vapordeposition mask, the method for producing an organic semiconductorelement using this vapor deposition mask, and the method for inspectingthe vapor deposition mask are described. In the case of setting theresin mask 20 containing the color material component as described forthe aforementioned first device or the resin mask 20 including the colormaterial layer 40 provided on the region not formed with openings asdescribed for the aforementioned second device, as compared with theresin mask not containing the color material component and the resinmask not including the color material layer, the light ray transmittanceat a predetermined wavelength can be reduced. The reduction of the lightray transmittance leads to improvement of inspection precision of theopenings, and as compared with a conventional resin mask, inspectionprecision of the openings can be improved by a reduction in light raytransmittance.

Accordingly, a vapor deposition mask of another embodiment ischaracterized in that a resin mask contains a color material componentor a color material layer is provided on the resin mask, not limited bythe light ray transmittance of the resin mask at a wavelength of about550 nm. It preferably contains a color material component and/or a colormaterial layer that can reduce the light ray transmittance at awavelength of about 550 nm. Moreover, for the frame-equipped vapordeposition mask, the method for producing an organic semiconductorelement and the method for inspecting a vapor deposition mask describedabove, a vapor deposition mask including the resin mask having thisfeature can also be used. Moreover, a vapor deposition mask preparationbody including the resin mask having this feature can also be set.

REFERENCE SIGNS LIST

-   100 Vapor deposition mask-   10 Metal mask-   15 Slit-   16 Through hole-   20 Resin mask-   25 Opening-   40 Color material layer-   60 Frame-   200 Frame-equipped vapor deposition mask

1. A vapor deposition mask comprising: a resin mask having an openingcorresponding to a pattern to be produced by vapor deposition, whereinthe resin mask has about 40% or less of light ray transmittance at awavelength of about 550 nm.
 2. The vapor deposition mask according toclaim 1, wherein the resin mask has about 10% or less of light raytransmittance at a wavelength of about 550 nm.
 3. The vapor depositionmask according to claim 1, wherein the resin mask has about 55% or lessof light ray transmittance at a wavelength of about 450 nm to 650 nm. 4.The vapor deposition mask according to claim 1, wherein the resin maskhas about 55% or less of light ray transmittance at a wavelength ofabout 380 nm to 780 nm.
 5. The vapor deposition mask according to claim1, wherein the resin mask contains a color material component.
 6. Thevapor deposition mask according to claim 5, wherein the color materialcomponent is at least one selected from the group consisting of carbonblack, black iron oxide, titanium oxide, and titanium dioxide.
 7. Thevapor deposition mask according to claim 5, wherein a content of thecolor material component is about 20 mass % or less to a total mass of aresin material of the resin mask.
 8. The vapor deposition mask accordingto claim 1, wherein a color material layer is provided on the resinmask, and a laminate of the resin mask and the color material layer hasabout 40% or less of light ray transmittance at a wavelength of about550 nm.
 9. The vapor deposition mask according to claim 8, wherein athickness of the laminate of the resin mask and the color material layeris about 3 μm or more and less than about 10 μm.
 10. The vapordeposition mask according to claim 1, wherein a thickness of the resinmask is about 3 μm or more and less than about 10 μm.
 11. The vapordeposition mask according to claim 1, wherein a thickness of the resinmask is about 30 μm or more.
 12. The vapor deposition mask according toclaim 1, wherein the resin mask is equipped with a frame.